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I D25
Polar TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFK 200N10P
IXFX 200N10P
V DSS = 100 V
= 200 A
R DS(on) ≤ 7.5 m Ω
t rr ≤ 150 ns
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXFK)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
100
100
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
200
V
V
A
G
D
S
D (TAB)
I D(RMS)
External lead current limit
75
A
I DM
I AR
E AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
400
60
100
A
A
mJ
PLUS247 (IXFX)
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
4
10
J
V/ns
D
S
TAB
T J ≤ 150 ° C, R G = 4 Ω
P D
T J
T JM
T stg
T L
T SOLD
M d
F C
Weight
T C = 25 ° C
1.6mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque TO-264
Mounting force PLUS247
TO-264
20
830
-55 ... +175
175
-55 ... +150
300
260
0.9/6
120/45 26
10
W
° C
° C
° C
° C
° C
Nm/lb.in
Nm/lb.in
g
G = Gate
S = Source
Features
D = Drain
Tab = Drain
PLUS247
6
g
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
Low package inductance
- easy to drive and to protect
BV DSS
V GS = 0 V, I D = 250 μ A
100
V
V GS(th)
V DS = V GS , I D = 8 mA
3.0
5.0
V
Advantages
I GSS
I DSS
V GS = ± 20 V, V GS = 0 V
V DS = V DSS
T J = 150 ° C
T J = 175 ° C
± 100
25
500
2.5
nA
μ A
μ A
mA
l
l
l
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
V GS = 15 V, I D = 400A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
5.5
7.5
m Ω
m Ω
? 2006 IXYS All rights reserved
DS99590E(03/06)
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